9/22-9/23 SEMI 化合物半导体活动安排 | |
时间/Time | 活动名称/Event |
9月22日 13:00-16:30 Sep.22nd 13:00-16:30 |
SEMI 中国化合物半导体标准技术委员会秋季会议 SEMI Standards Compound Semiconductor China TC Chapter Fall Meeting |
9月23日 09:00-17:00 Sep.23rd 09:00-17:00 |
化合物半导体制造技术论坛 Compound Semiconductor Technology Forum |
地点:3楼新华厅,芜湖华邑酒店(安徽省芜湖市弋江区长江南路34号) Venue: Xinhua Ballroom, 3F of HUALUXE Wuhu (No. 34 Changjiang South Road, Yijiang District, Wuhu City, Anhui Province) |
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08:50-09:20 | 签到 / Registration | |
09:20-09:40 |
欢迎致辞 / Welcome Remark 居龙,SEMI中国,总裁 Lung Chu, President of SEMI China |
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芜湖市领导 | ||
09:40-09:55 |
芜湖第三代半导体制造中心介绍及产业规划暨启迪半导体SiC MOSFET和GaN HEMT技术发布会 Introduction and Development Plan of Wuhu Advanced Semiconductor Manufacturing Co., Ltd & SiC MOSFET and GaN HEMT Technical Conference of WASMC 赵清,芜湖启迪半导体有限公司,董事长 Qing Zhao, Chairman of the Board, Wuhu Advanced Semiconductor Manufacturing Co., Ltd. |
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09:55-10:15 |
启迪半导体的碳化硅和氮化镓工艺技术 Technology of SiC and GaN in Wuhu Advanced Semiconductor Manufacturing Co., Ltd. 王敬,芜湖启迪半导体有限公司,首席科学家 Jing Wang, Chief Scientist of Wuhu Advanced Semiconductor Manufacturing Co., Ltd. |
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10:15-10:45 |
化合物半导体MOCVD设备技术及应用进展 Progress of MOCVD Equipment Technology and Its Application for Compound Semiconductor 郭世平,中微半导体设备(上海)股份有限公司,副总裁 Shiping Guo, VP of Advanced Micro-Fabrication Equipment Inc. |
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10:45-11:15 |
5G通讯时代的氮化镓器件 GaN Device for 5G Communication Era 裴轶,苏州能讯高能半导体有限公司,技术副总裁 Yi Pei, VP of Technology, Dynax Semiconductor |
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11:15-11:45 |
化合物半导体用国产光学检测设备的一些进展 Some Progress of Domestic Optical Inspection Systems for Compound Semiconductors 马铁中,昂坤视觉(北京)科技有限公司,CEO Aris Ma, CEO of AK Optics Technology Co. Ltd |
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11:45-13:30 | 休息 / Break | |
13:30-14:00 |
6英寸1200V SiC MOSFET工艺平台的测试认证 Towards Qualification of 1200V SiC MOSFET Process on 150mm Wafers 张永熙,上海瞻芯电子科技有限公司,总经理 Yongxi Zhang, CEO of InventChip Technology Co., Ltd. |
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14:00-14:30 |
抛光技术在化合物半导体制造的应用 Applications of Polishing Technology in Compound Semiconductor Manufacture 刘泳沣,北京特思迪半导体设备有限公司,CEO Yongfeng Liu, CEO of Beijing TSD Semiconductor Co., Ltd. |
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14:30-15:00 |
用于新型GaN功率器件的外延技术进展 Progress on GaN Epitaxial Technology for Novel Power Device 程凯,苏州晶湛半导体有限公司,董事长兼总裁 Kai Cheng, Board Chair/CEO of Enkris Semiconductor Inc. |
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15:00-15:30 |
磷化铟和锑化镓衬底的量产技术、市场及发展趋势 Mass Production Technology, Market and Development Trend of InP and GaSb Substrates 赵有文,中国科学院半导体研究所,研究员/珠海鼎泰芯源晶体有限公司,首席科学家兼总工程师 Youwen Zhao, Researcher of Institute of Semiconductors, CAS/Chief Scientist & Chief Engineer of Zhuhai DT Wafer-Tech Co., LTD |
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15:30-16:00 |
碳化硅单晶材料研究进展 王英民,中国电子科技集团公司第四十六研究所,首席专家 Yingmin Wang, Chief Expert of CETC 46 |
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16:00-16:30 |
碳化硅功率器件在电网中的应用 Application of Silicon Carbide Power Device in Power Grid 田亮,南瑞联研半导体有限责任公司,SiC技术总监 |
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16:30-17:00 |
超宽禁带晶圆级和热沉级金刚石衬底材料(Virtual) Ultra Wide Band Gap Wafer and Heat Sink Diamond Substrates 张星,化合积电(厦门)半导体科技有限公司,CEO Xing Zhang, CEO of Compound Semiconductor Manufacturing(Xiamen) Co., Ltd |
戚发鑫 / Daniel Qi | 吴迪 / Ein Wu | 金燕 / Isadora Jin(标委会联系人) | |
Tel: 021.6027.8576 | Tel: 021.6027.8509 | Tel: 021.6027.8578 | |
Email: [email protected] | Email: [email protected] | Email: [email protected] |
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支持媒体/ Supporting Media: |
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