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欢迎致辞 / Welcome Remark
居龙,SEMI全球副总裁、中国区总裁
Lung Chu, President, SEMI China; Vice President, SEMI
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8英寸碳化硅衬底制备技术及发展趋势
Preparation Technology and Development Trend of 8-inch SiC Substrate
崔景光,副总工程师,河北同光半导体股份有限公司
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抛光技术在化合物半导体制造的应用
Application of polishing technology in compound semiconductor manufacturing
刘泳沣,CEO,北京特思迪半导体设备有限公司
Yongfeng Liu, CEO of Beijing TSD Semiconductor Co., Ltd.
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增强型傅里叶变换红外光谱在SiC多层膜全面表征中的应用
Comprehensive characterisation of SiC multilayers with enhanced FTIR spectroscopy
Dr. Peter Basa, Deputy Manager of Optical Measurement Technologies Division, Semilab Co. Ltd.
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半导体先进键合集成技术与应用
母凤文,董事长&总经理,北京青禾晶元半导体科技有限责任公司
Fengwen Mu, CEO, Innovative Semiconductor Substrate Technology Co. Ltd.
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碳化硅产业技术介绍以及关键工艺设备分析
SiC introduce and key layer machine analysis
韩商标,总监,长飞先进半导体有限公司
Bob Han, Director, YASC
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大尺寸碳化硅衬底生长技术的挑战与进展
Challenges and progress in the growth technology of large-sized silicon carbide substrates
邱艳丽,研发部部长,合肥世纪金芯半导体有限公司
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超宽禁带氧化镓基化合物半导体
Ultrawide bandgap gallium oxide compound semiconductor
陈子强,助理教授,香港科技大学(广州)
Tan Chee Keong, Assistant Professor, The Hong Kong University of Science and Technology (Guangzhou)
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打造第三代半导体制造关键设备-原子层沉积和离子注入
Key Equipment to Enable Third Generation Semiconductor Manufacturing – Atomic Layer Deposition & Ion Implantation
陈祥龙,副总经理,青岛四方思锐智能技术有限公司
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金刚石材料检测及应用可靠性分析
Test and Application Reliability Analysis of Diamond
袁瑞成,金刚石检验检测中心主任,化合积电(厦门)半导体科技有限公司
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国产碳化硅产业发展的新拐点、新环境、新挑战
The new inflection point, new environment and new challenge of the domestic silicon carbide industry
高远,应用测试中心总监,泰科天润半导体科技(北京)有限公司
Yuan Gao, Application Test Center Director, Global Power Technology
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